Samsung producing 30nm 3-bit, DDR flash memory

Samsung tonight said it has started mass production of two variants of its 30 nanometer NAND flash memory. Leading off is relatively new DDR (double data rate), multi-level cell NAND memory; like DDR RAM, it puts through twice as much data in a given cycle and promises to be much faster than historically slow NAND chips. The Korean company goes so far as to claim more than three times the speed, estimating that a single DDR multi-level cell NAND chip could read data at a peak 133Mbps versus 40Mbps for its old equivalent…

Continue reading here:
Samsung producing 30nm 3-bit, DDR flash memory